Identity of the shallowest acceptor in GaN

The Be-related ultraviolet luminescence band with a maximum at about 3.38eV in GaN:Be is caused by the shallowest acceptor in GaN with the −/0 transition level at 0.113eV above the valence band. The luminescent properties of this acceptor were studied in detail. First-principles calculations identify this acceptor as the BeGaONBeGa complex. These calculations also predict a deep level, at 0.34eV above the valence band. However, we were not able to find evidence for this level in photoluminescence experiments. locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon Physics Subject Headings (PhySH)Carrier generation & recombinationDefectsDoping effectsDoped semiconductorsLayered semiconductorsSemiconductor compoundsSemiconductorsWide band gap systemsDensity functional theoryFirst-principles calculationsLuminescencePhotoluminescence