薄脆饼
研磨
锭
抛光
切片
材料科学
模具准备
晶片切割
化学机械平面化
图层(电子)
工程制图
机械工程
光电子学
冶金
复合材料
工程类
合金
作者
Deren Yang,Xianwen Liang,Xuegong Yu
标识
DOI:10.1007/978-981-99-2836-1_75
摘要
This chapter reviews the Si wafer-processing technology, including ingot heat treatment, cutting, slicing, lapping, polishing, wafer cleaning, and packaging. The ingot heat treatment is used to eliminate thermal donors or repair neutron irradiation damage. After the crystal orientation of Si ingot is measured by X-ray diffraction method, the wafer-making processes start. Nowadays, the blade cutting is gradually replaced by the more efficient wire sawing technology. Then, the lapping is used to remove the damage layer caused by slicing process. The most important step is the wafer polishing, for achieving “mirror like” surface with excellent geometric accuracy for device fabrication. Wafer cleaning is needed to eliminate the contamination during the former processes, followed by the wafer packaging.
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