抵抗
二次离子质谱法
聚合物
铝
分析化学(期刊)
飞行时间
材料科学
纳米光刻
离子束
次级电子
质谱法
基质(水族馆)
离子
静态二次离子质谱
氧化物
化学
纳米技术
电子
复合材料
图层(电子)
有机化学
制作
冶金
病理
地质学
物理
替代医学
海洋学
医学
量子力学
色谱法
作者
Shunya Ito,Yuki Ozaki,Takahiro Nakamura,Masaru Nakagawa
标识
DOI:10.35848/1347-4065/ab8a0a
摘要
Sequential infiltration synthesis (SIS) is a promising method for organic–inorganic hybridization of organic polymer resist films in nanolithography. The understanding of the distribution of inorganic components in hybrid films is necessary for the practical use of SIS-treated resist films. In this study, we investigated the distribution of aluminum oxide in SIS-treated positive-tone electron beam resist films of poly(methyl methacrylate) and ZEP520A with thicknesses of 100, 40, and 20 nm by time-of-flight secondary ion mass spectrometry (TOF-SIMS). TOF-SIMS profiles revealed that the aluminum species of AlO− and AlO2− derived from aluminum oxide existed heterogeneously near the air/polymer surface, film inside, and polymer/substrate interface, and the distributions of respective species depended on film thickness. TOF-SIMS enabled the characterization of aluminum distribution in 20 nm thick resist films. It was suggested that the oxidation states of Al components were different between near the air/polymer surface and near the polymer/substrate interface.
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