碳化硅
材料科学
逆变器
MOSFET
功率半导体器件
结温
堆栈(抽象数据类型)
牵引(地质)
功率MOSFET
电气工程
电感
光电子学
电源模块
电压
汽车工业
半导体器件
功率密度
功率(物理)
计算机科学
工程类
机械工程
晶体管
复合材料
物理
量子力学
航空航天工程
图层(电子)
程序设计语言
作者
Ajay Poonjal Pai,Michael Ebli,Tobias Simmet,Adrian Lis,Markus Beninger-Bina
标识
DOI:10.1109/itec53557.2022.9813878
摘要
This paper presents a high performance Double Side Cooled (DSC) module based on trench Silicon Carbide (SiC) MOSFETs. The module thermal stack is optimized to reach a superior thermal performance and thereby, a high current density. The stray inductance of the module is minimized to allow the usage of a lower breakdown voltage semiconductor, allowing for further optimization of its conduction performance. The module is experimentally characterized, and compared with a Silicon- (Si) based Module to evaluate the efficiency benefits of SiC at the inverter level.
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