材料科学
有机太阳能电池
阴极
电极
氧化铟锡
纳米技术
佩多:嘘
卷到卷处理
光电子学
图层(电子)
电气工程
复合材料
聚合物
工程类
化学
物理化学
作者
Jiachen Wang,Kenjiro Fukuda,Daishi Inoue,Daisuke Hashizume,Lulu Sun,Sixing Xiong,Tomoyuki Yokota,Takao Someya
标识
DOI:10.1021/acsami.1c24235
摘要
Flexible, lightweight, and large-area solar cells provide new power supply opportunities in the renewable energy field and facilitate the supply of power to internet-of-things devices and wearable devices. The choice of printing process technologies is a key parameter for such flexible power sources because of their energy-saving process technology and high throughput rate. In addition to selecting the appropriate printing method for the active and charge transport layers, the development of printed electrodes is critical. Numerous printable materials have been developed to replace conventional evaporated top electrodes. However, achieving fully solution-processed organic photovoltaics (OPVs) with power conversion efficiency (PCE) comparable to OPVs with vacuum-deposited transparent and top electrodes is challenging. This is because of the difficulty of forming a uniform interface between the top solution-processed electrode and the active layers while preventing deterioration. In this study, an electron transport layer-free, eutectic gallium-indium (EGaIn) top-cathode strategy was developed and a record PCE of 12.7% in fully solution-processed, flexible OPVs was achieved. Direct coating of EGaIn on the active layer, in a nitrogen atmosphere, is conducive for energy band matching and obtaining physically perfect interfaces without any penetrations or voids. An average PCE of 14.1% and enhanced operating stability, comparable to conventional OPVs, were achieved with indium tin oxide transparent electrodes by eliminating the electron-transport layer. The fully solution-processed flexible OPVs fabricated with the embedded silver nanowire strategy in ultrathin transparent polyimide, achieved an average PCE of 12.7%, representing a promising technique to meet green and high-throughput energy demands.
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