Numerical design of induction heating in the PVT growth of SiC crystal

A 2-D numerical global model was applied to study effects of induction heating system on silicon carbide single crystal growth by a finite element method. Models with different coil radii and different electrical frequencies were carried out to investigate the relationship between coil design and SiC crystal growth process while the temperature of the monitoring point was fixed at about 2300 K. The predicted growth rate along the substrate surface was also compared and discussed. The results showed that the temperature distribution inside the furnace and the growth rate were affected by coil radius and electrical frequency. Finally, based on the analysis of simulation results, one reasonable range of coil radius and electrical frequency compromising a balance between higher growth rate, lower electrical power consumption, lower thermal stress in grown crystals and more stable operation of SiC powder was obtained.