电致发光
发光二极管
光致发光
量子产额
兴奋剂
发光
化学
量子效率
钝化
二极管
纳米晶
离子
材料科学
光电子学
纳米技术
荧光
光学
物理
有机化学
图层(电子)
作者
Siqi Sun,Min Lu,Jie Guo,Fujun Zhang,Po Lu,Yuhao Fu,Xue Bai,Zhifeng Shi,Zhennan Wu,William W. Yu,Yù Zhang
标识
DOI:10.1016/j.cej.2021.133556
摘要
Zero-dimensional (0D) perovskites have attracted a great deal of attention over the last few years due to their fascinating properties. However, their application in electroluminescent (EL) Light-emitting diodes (LEDs) is limited and suffering from extremely low device performance. Herein, the nonluminescent Cs4PbBr6 nanocrystals (NCs) were successfully transformed to highly luminescent Zn-doped CsPbBr3/Cs4PbBr6 NCs via an insertion reaction with ZnBr2, which changed the atomic molar ratios of NCs and promoted the formation of CsPbBr3. In this reaction, the Zn2+ ions provided by ZnBr2 together with the Pb2+ ions can occupy the B-site due to the similar ion radius. The extra Br- ions not only can facilitate the transformation process, but also can passivate the surface defects of the NCs, resulting in high photoluminescence quantum yield (PL QY) of 77.5%. Furthermore, as-synthesized Zn-doped CsPbBr3/Cs4PbBr6 NCs were used as emitters to fabricate EL LEDs. The device achieved the maximum current efficiency of 9.8 cd/A and a peak external quantum efficiency of 3.2%, which is the best performance of the CsPbBr3/Cs4PbBr6 based LEDs. This reveals the great application potential of CsPbBr3/Cs4PbBr6 NCs as EL emitters in LEDs.
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