半导体
有机半导体
材料科学
电子迁移率
光电子学
共轭体系
电子
聚合物
化学物理
纳米技术
化学
物理
量子力学
复合材料
作者
Enquan Jin,Keyu Geng,Shuai Fu,Sheng Yang,Narissa Kanlayakan,Matthew A. Addicoat,Nawee Kungwan,Johannes Geurs,Hong Xu,Mischa Bonn,Hai I. Wang,J. H. Smet,Tim Kowalczyk,Donglin Jiang
出处
期刊:Chem
[Elsevier BV]
日期:2021-09-09
卷期号:7 (12): 3309-3324
被引量:55
标识
DOI:10.1016/j.chempr.2021.08.015
摘要
Most organic/polymeric semiconductors are p-type semiconductors, whereas their n-type versions are limited in both availability and carrier mobility. How to develop high-rate n-type organic/polymeric semiconductors remains challenging. Here, we report an approach to high-rate n-type semiconductors via topology-directed polycondensation of conventional p-type knots with n-type isoindigo linkers to form non-conjugated tetragonal and hexagonal two-dimensional polymeric frameworks. The polymers are planar in conformation and show flattened frontier levels, which enable electrons to move along the non-conjugated polymeric backbones. The eclipsed face-to-face stack reduces reorganization energy and greatly strengthens electronic coupling, thus enabling band-like electron conduction perpendicular to polymer layers. A device recording electron mobility as high as 8.2 cm2 V−1 s−1 was achieved with Hall effect measurements, whereas time- and frequency-resolved terahertz spectroscopy revealed a benchmark mobility of 13.3 cm2 V−1 s−1. These new mechanistic insights with exceptional mobility open the way to high-rate n-type organic/polymeric semiconductors.
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