材料科学
椭圆偏振法
基质(水族馆)
薄膜
折射率
氧化硅
分析化学(期刊)
硅
等离子体增强化学气相沉积
化学计量学
沉积(地质)
托尔
光电子学
纳米技术
化学
氮化硅
物理
地质学
海洋学
古生物学
有机化学
热力学
生物
色谱法
沉积物
作者
E Yu Gusev,J Y Jityaeva,S. P. Avdeev,O A Ageev
出处
期刊:Journal of physics
[IOP Publishing]
日期:2018-12-01
卷期号:1124: 022034-022034
被引量:2
标识
DOI:10.1088/1742-6596/1124/2/022034
摘要
Silicon oxide (SiOx) films were obtained from SiH4/NO2/Ar by plasma-enhanced chemical vapors deposition (PECVD) technique. Effect of substrate temperature on the properties of the deposited films have been presented. The substrate temperature of the deposition process varied from 150 to 450°C at fixed working pressure of 1000 mTorr and RF power of 10 W. The films were investigated by atomic force and scanning electron microscopies as well as laser ellipsometry. The grain size, root-mean-square roughness and refractive index of the films were in the range of 20-250 nm, 0.2-2.4 nm and 1.5-2.0, respectively. The refractive indices and stoichiometry of SiOx films are discussed using the Lorentz-Lorenz formula.
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