Sol–gel derived undoped and boron-doped ZnO semiconductor thin films: Preparation and characterization

We report the influence of boron doping concentration on the microstructure, electrical and optical properties of solution-processed zinc oxide (ZnO) thin films. The B doping concentration in the resultant solutions was varied from 0 to 5 at%, and the pH value of each synthetic solution was adjusted to 7.0. XRD measurements, SEM observations, and SPM examinations revealed that boron doping produced ZnO thin films consisting of a fine grain structure with a flat surface morphology. Moreover, ZnO thin films doped with B raised the texture coefficient along the (002) plane. All B-doped ZnO (ZnO:B) thin films exhibited higher transparency than that of the undoped ZnO thin film in the wavelengths between 350 and 650 nm. The optical band gap and Urbach energy of the ZnO:B thin films were higher than those of the undoped thin film. According to electrical transport characteristics, the 1% B-doped ZnO thin film exhibited the highest Hall mobility of 17.9 cm2/V s, the highest electron concentration of 1.2×1015 cm−3, and the lowest electrical resistivity of 2.2×102 Ω cm among all of the ZnO:B thin films.