溢出效应
氢溢流
材料科学
吉布斯自由能
化学物理
氢
碳纤维
兴奋剂
金属
热力学
化学
物理
光电子学
有机化学
复合材料
经济
冶金
复合数
微观经济学
作者
Kyuho Lee,Yong‐Hyun Kim,Yiyang Sun,Damien West,Yufeng Zhao,Zhongfang Chen,Shengbai Zhang
标识
DOI:10.1103/physrevlett.104.236101
摘要
Hydrogen spillover on carbon-based systems has been proposed as a viable alternative for room-temperature storage. Given the strength of the C-H bonds, however, it is unclear if spillover indeed takes place in such materials. We performed a first-principles study of H spillover on IRMOF-1. Spillover becomes thermodynamically stable only at high H coverage with a calculated Gibbs free energy of $\ensuremath{-}14\text{ }\text{ }\mathrm{kJ}/\mathrm{mol}$ at ambient condition. In general, however, spillover may not proceed due to high-energy states at lower H coverage. We propose that hole doping can substantially lower the energies as well as barriers to enable spillover at ambient conditions.
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