Secondary ion mass spectrometry of dopant and impurity elements in wide bandgap semiconductors

Based on secondary ion mass spectrometry (SIMS) measurements, we have compiled state-of-the-art data concerning dopant elements and natural impurities in the wide bandgap semiconductor materials diamond, SiC, ZnSe, GaN and AlN. Samples were prepared by ion implantation of different elements into these materials and post-implantation thermal annealing. SIMS depth profiling techniques were used to determine atomic depth profiles of implanted elements and subsequent changes produced by annealing. Range statistics and SIMS relative sensitivity factors were established for major dopant and impurity elements in these wide bandgap materials. Results of these studies are presented in tabular form along with representative depth profile figures.