材料科学
单晶硅
基质(水族馆)
化学气相沉积
纳米技术
沉积(地质)
带隙
电介质
硅
光电子学
沉积物
生物
海洋学
地质学
古生物学
作者
Sruthi Kuriakose,Shubhendra Kumar Jain,Sherif Abdulkader Tawfik,Michelle J. S. Spencer,Billy J. Murdoch,Mandeep Singh,F. H. Rahman,Edwin Mayes,Mohammad Yousef O Taha,Rajour Tanyi Ako,Vipul Bansal,Taimur Ahmed,Sharath Sriram,Madhu Bhaskaran,Sivacarendran Balendhran,Sumeet Walia
标识
DOI:10.1002/admi.202001678
摘要
Abstract Among the family of elemental 2D materials, antimonene is predicted to have a desirable combination of bandgap tunability and exceptional physical properties. However, there is a lack of a facile synthesis technique to prepare high‐quality antimonene with large aspect ratios on standard SiO 2 substrates, hindering wide scale exploration of this material. Here, a physical vapor deposition process to controllably achieve millimeter‐scale, β‐phase, monocrystalline antimonene nanosheets on a SiO 2 dielectric substrate is reported. The temperature gradient across the deposition tube is exploited to realize either large‐area nanosheets or single antimonene crystals on‐demand. The composition and quality of the nanosheets and crystals is assessed using spectroscopy, diffraction, and microscopy techniques which suggest the formation of the β‐phase allotrope. The band structure of as‐synthesized nanosheets which matches the theoretically calculated values is experimentally extracted. Finally, contrary to earlier reports, the oxidation of antimonene under ambient conditions over a period of time indicating the need for further experimental studies of the material's stability is revealed. The reported controllable growth of antimonene nanosheets and single crystals on conventional dielectric substrates opens a spectrum of possible applications of this material in electronics and optoelectronics devices.
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