材料科学
异质结
X射线光电子能谱
同质结
剥脱关节
光探测
拉曼光谱
光电子学
制作
吸收(声学)
范德瓦尔斯力
金属有机气相外延
二硫化钼
光电探测器
石墨烯
纳米技术
光学
化学工程
外延
工程类
病理
复合材料
物理
冶金
医学
替代医学
图层(电子)
作者
Shaona Bose,Subhrajit Mukherjee,Subhajit Jana,Sanjeev K. Srivastava,Samit K. Ray
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2021-07-27
卷期号:34 (12): 125704-125704
标识
DOI:10.1088/1361-6528/acab6e
摘要
Two dimensional (2D) van der Waals heterostructures (vdWHs) have unique potential in facilitating the stacking of layers of different 2D materials for optoelectronic devices with superior characteristics. However, the fabrication of large area all-2D heterostructures is still challenging towards realizing practical devices at a reduced cost. In the present work, we have demonstrated a rapid yet simple, impurity-free and efficient sonication-assisted chemical exfoliation approach to synthesize hybrid vdWHs based on 2D molybdenum disulphide (MoS2) and tungsten disulphide (WS2), with high yield. Microscopic and spectroscopic studies have confirmed the successful exfoliation of layered 2D materials and formation of their hybrid heterostructures. The co-existence of 2D MoS2and WS2in the vdWH hybrids is established by optical absorption and Raman shift measurements along with their chemical stiochiometry determined by x-ray photoelectron spectroscopy. The spectral response of the vdWH/Si (2D/3D) heterojunction photodetector fabricated using the as-synthesized material is found to exhibit broadband photoresponse compared to that of the individual 2D MoS2and WS2devices. The peak responsivity and detectivity are found to be as high as ∼2.15 A W-1and 2.05 × 1011Jones, respectively for an applied bias of -5 V. The ease of fabrication with appreciable performance of the chemically synthesized vdWH-based devices have revealed their potential use for large area optoelectronic applications on Si-compatible CMOS platforms.
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