Design and simulation of InGaAs/InP avalanche photodiode for single photon detection

InGaAs/InP avalanche photodiode (APD) is essential for LiDAR applications. Compared with other optoelectronic devices, APD has two main advantages: high quantum efficiency and high detection efficiency. In this study, the design and simulation of a InGaAs/InP APD for single photon detection was conducted. And the APD is with a separate absorption, grading, charge, and multiplication (SAGCM) structure. Silvaco TCAD was used to simulate and optimize the layer thickness and dopant concentration, the reach-through and breakdown voltage, and the light detection efficiency. The results show that the InGaAs/InP APD structure proposed in this study is qualified for single photon detection in the wavelength range of 0.9μm to 1.6μm.