绝缘体(电)
金属
复合材料
介电强度
薄膜电容器
作者
B. O'Connell,T. Thibeault,P. Chaparala
出处
期刊:International Conference on IC Design and Technology
日期:2004-10-04
卷期号:: 123-126
被引量:4
标识
DOI:10.1109/icicdt.2004.1309925
摘要
Impact on MIM capacitor reliability with respect to plasma damage is investigated for different dielectric films and layout variations. MIM capacitor reliability is found to be sensitive to dielectric type, MIM layout and bottom plate metal processing. Plasma Process steps responsible for affecting MIM reliability are identified.
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