激光器
二极管
光电子学
量子阱
连续波
半导体激光器理论
泄漏(经济)
材料科学
功率(物理)
物理
散热片
氮化镓
兴奋剂
宽禁带半导体
量子阱激光器
激光功率缩放
光学
量子点激光器
纳米技术
热力学
图层(电子)
经济
宏观经济学
作者
Joachim Piprek,Shuji Nakamura
出处
期刊:IEE proceedings
[Institution of Electrical Engineers]
日期:2002-08-01
卷期号:149 (4): 145-151
被引量:140
标识
DOI:10.1049/ip-opt:20020441
摘要
The authors analyse the performance and device physics of nitride laser diodes that exhibit the highest room-temperature continuous-wave output power. The analysis is based on advanced laser simulation. The laser model self-consistently combines band structure and free-carrier gain calculations with two-dimensional simulations of wave guiding, carrier transport and heat flux. Material parameters used in the model are carefully evaluated. Excellent agreement between simulations and measurements is achieved. The maximum output power is limited by electron leakage into the p-doped ridge. Leakage escalation is caused by strong self-heating, gain reduction and elevated carrier density within the quantum wells. Built-in polarisation fields are found to be effectively screened at high-power operation. Improved heat-sinking is predicted to allow for a significant increase of the maximum output power.
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