面(心理学)
成核
外延
透射电子显微镜
材料科学
硅
相(物质)
结晶学
无定形固体
化学
纳米技术
光电子学
心理学
社会心理学
有机化学
人格
图层(电子)
五大性格特征
作者
Tomo Ueno,Kenji Kawai,Toru Morisawa,Takahiro Hatano,Yasuo Kunii,Iwao Ohdomari
摘要
A model for {111} facet formation during lateral solid-phase epitaxy (L-SPE) along the <100> direction has been proposed. Based on the experimental fact that the SPE growth rate along the <110> direction is higher than the <111> direction by a factor of seven, it is concluded that, at the very base of a V-shaped SPE front delineated by {111} facets, SPE takes place predominantly along the <110> direction unless there are obstacles. This would eventually bury the V-shaped valley and the flat {110} facet would be resumed. In order to match this view with the well-known fact that the flat {110} facets never recover once the folded {111} facets are formed, we must assume that there are some obstacles which cause and sustain the folded {111} facets. Via plan-view transmission electron microscopy (TEM) observation we have found that the obstacle is the polygrains which have grown randomly in the amorphous Si region due to heterogeneous nucleation.
科研通智能强力驱动
Strongly Powered by AbleSci AI