硒化铜铟镓太阳电池
开路电压
光电子学
材料科学
光伏系统
太阳能电池
短路
缓冲器(光纤)
图层(电子)
电流密度
能量转换效率
电压
电气工程
纳米技术
工程类
物理
量子力学
作者
Mohammed Mostefaoui,H. Mazari,Samira Khelifi,Ahmed Bouraiou,Rachid Dabou
标识
DOI:10.1016/j.egypro.2015.07.809
摘要
In this paper, the high efficiency Cu(In,Ga)Se 2 (CIGS)-based solar cells solar cells was analyzed and designed by SCAPS-1D software. This paper deals with the influence of a buffer layer on the performance of the CIGS-based solar cells. The photovoltaic parameters have been calculated in different buffer layer materials (CdS, ZnS, ZnSe), we give great alternative for Cadmium sulphide (CdS). Starting with a good structure, we simulated the J-V characteristics and showed how the absorber and buffer layers thickness, defect density influence the short-circuit current density (J sc ), open-circuit voltage (V co ), fill factor (FF), and efficiency (η) of solar cell. The optimized solar cell shows an efficiency of > 22% under the AM1.5G spectrum and one sun.
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