瓶颈
晶体管
互连
电容
缩放比例
计算机科学
点(几何)
半导体工业
电子工程
电气工程
材料科学
工程类
嵌入式系统
物理
电信
电压
制造工程
几何学
数学
电极
量子力学
作者
Joon‐Seok Kim,Joonyun Kim,Dae‐Jin Yang,Jaewoo Shim,Luhing Hu,Chang‐Seok Lee,J. M. Kim,Sang Won Kim
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2024-12-12
卷期号:386 (6727)
标识
DOI:10.1126/science.adk6189
摘要
The advancement in semiconductor technology through the integration of more devices on a chip has reached a point where device scaling alone is no longer an efficient way to improve the device performance. One issue lies in the interconnects connecting the transistors, in which the resistivity of metals increases exponentially as their dimensions are scaled down to match those of the transistors. As a result, the total signal processing delay is dominated by the resistance-capacitance (RC) delay from the interconnects rather than the delay from the transistors’ switching speed. This bottleneck has spurred efforts both in academia and industry to explore alternative materials and disruptive device structures. Therefore, we suggest strategies to overcome the RC delay of the interconnects in both material and device aspects.
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