单层
光致发光
拉曼光谱
材料科学
兴奋剂
压电
凝聚态物理
外延
基质(水族馆)
激子
光电子学
纳米技术
光学
图层(电子)
物理
复合材料
地质学
海洋学
作者
P. A. Balunov,A. V. Ankundinov,I. D. Breev,M. S. Dunaevskiy,Alexandr S. Goltaev,A. I. Galimov,V. N. Jmerik,K. V. Likhachev,M. V. Rakhlin,А. А. Торопов,A. S. Vlasov,A. M. Mintairov
摘要
We report non-contact local doping of a monolayer WSe2 transferred onto a piezoelectric substrate having surface potential wells (SPWs) induced by structural inhomogeneities. We used epitaxial GaN and InP/GaInP2 structures, in which there are SPWs ∼0.2 V deep and 0.1–2 μm in size. Using surface topography and potential scanning probe microscopy, as well as optical reflectance, photoluminescence, and Raman spectroscopy measurements, we observed strong enhancement of charged exciton emission and Raman intensity in the SPW regions of the monolayer WSe2, which indicate on piezoelectric doping at a level n ≥ 1012 cm−2 on a length scale ∼0.2–1 μm. Our results can be used to create electron/hole quantum puddles with anyon states in transition metal dichalcogenides, promising for the development of room temperature and magnetic-field-free fault-tolerant topological quantum computing.
科研通智能强力驱动
Strongly Powered by AbleSci AI