铁电性
兴奋剂
掺杂剂
材料科学
四方晶系
光电子学
正交晶系
相(物质)
纳米技术
电介质
化学
结晶学
晶体结构
有机化学
作者
Zeping Weng,Yiming Qu,Zhangsheng Lan,Jirong Liu,Mingji Su,Jianguo Li,Yaru Ding,Choonghyun Lee,Zhao Liang,Yi Zhao
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2022-10-01
卷期号:43 (10): 1665-1668
被引量:5
标识
DOI:10.1109/led.2022.3203472
摘要
In this letter, wake-up free La-doped HfO2-ZrO2 (HZO) ferroelectrics are experimentally fabricated using an atomic layer-specific doping (ALSD) technique, which selectively introduces La dopants at effective locations to facilitate the formation of ferroelectric orthorhombic phase. With this technique, robust La-doped HZO ferroelectric devices that are mostly free from the undesired wake-up effect and anti-ferroelectricity were demonstrated over a large La doping range (from 2.9 to 11.5%). Moreover, large remanent polarization and good endurance were achieved at the same time (>107 cycles). The outstanding performances can be attributed to the effective stabilization of ferroelectric orthogonal phase and the suppression of tetragonal phase, through controlling of the dopants’ local environment. Thus, ALSD is an effective approach to achieve reliable, wake-up free and CMOS-compatible HZO-based ferroelectrics.
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