Ultra-wide bandgap Ga2O3 technologies: benefits of heterogenous integration

We discuss the potential of heterogenous integration of Ga₂O₃ with diamond for enabling energy-efficient kV-class power devices. The integration alleviates Ga₂O₃ material drawbacks such as its low thermal conductivity and inefficient hole conductivity. The benefits of heterogeneous integration are demonstrated through electrical and thermal simulations of a Ga₂O₃-Al₂O₃-diamond superjunction based Schottky barrier diode. The simulation studies show that the novel device has potential to break the RON-breakdown voltage limit of Ga₂O₃, while showing relatively low rise in temperature compared to conventional devices. First steps for the actual materials integration are taken with the epitaxial growth of Ga₂O₃ on single crystal diamond substrates.