材料科学
氧化锡
介电谱
光电子学
钙钛矿(结构)
基质(水族馆)
等离子体
氧化铟锡
电极
兴奋剂
图层(电子)
表面改性
能量转换效率
分析化学(期刊)
化学工程
纳米技术
化学
电化学
量子力学
海洋学
物理
地质学
工程类
物理化学
色谱法
作者
Van‐Duong Dao,Liudmila L. Larina,Ho‐Suk Choi
标识
DOI:10.1016/j.tsf.2015.09.035
摘要
This study reports for increasing the efficiency of perovskite solar cells (PSCs) by modifying the surface of a fluorine-doped indium tin oxide (FTO) substrate using an atmospheric pressure plasma treatment. Surface modification of the FTO film involved several challenges, such as control of the blocking layer uniformity, removal of pinholes, and deposition of a dense layer. This strategy allows the suppression of charge recombination at the interface between the FTO substrate and hole conductor. Electrochemical impedance spectroscopy analysis showed that the plasma treatment increased the charge transfer resistance between the FTO and hole conductor from 95.1 to 351.1 Ω, indicating enhanced resistance to the electron back reaction. Analyses of the open-circuit photovoltage decay revealed that modification of the surface of the FTO substrate by plasma treatment increased time constant from 6.44 ms to 13.15 ms. The effect is ascribed to suppression of the electron recombination rate. PSCs based on the newly developed electrode had 39% higher efficiency than reference devices. The obtained results provide direct evidence in favor of the developed strategy.
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