材料科学
光电子学
佩多:嘘
钙钛矿(结构)
带隙
太赫兹辐射
氧化铟锡
霍尔效应
聚苯乙烯磺酸盐
能量转换效率
薄膜
电阻率和电导率
纳米技术
电气工程
图层(电子)
化学工程
工程类
作者
Madan K. Mainali,Prakash Uprety,Zhaoning Song,Changlei Wang,Indra Subedi,Biwas Subedi,Kiran Ghimire,Maxwell M. Junda,Yanfa Yan,Nikolas J. Podraza
标识
DOI:10.1016/j.mssp.2023.107936
摘要
Carrier concentration (N) of indium tin oxide (ITO), poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), and low bandgap perovskite (FASnI3)0.6(MAPbI3)0.4 in the photovoltaic device configuration are determined using terahertz (THz) spectral range optical Hall effect measurements and analysis. Unlike direct electrical Hall effect, this technique is non-invasive as it does not need any direct electrical contacts and is able to probe free carrier transport properties of individual films inside the device stack. A modified Drude model is implemented to address the dominating free carrier absorption in the THz spectral range. N of the ITO, PEDOT:PSS, and (FASnI3)0.6(MAPbI3)0.4 are determined to be (2.8 ± 0.6) × 1020 cm-3, (2.6 ± 0.8) × 1022 cm-3, and (1.5 ± 0.1) × 1018 cm-3, respectively. PV device performance is simulated with SCAPS employing the findings from optical Hall measurements. Open circuit voltage (VOC), short circuit current (JSC), fill factor (FF), power conversion efficiency (PCE) are found to be 0.865 V, 29.2 mAcm-2, 66.7%, and 16.8% respectively which are within 3% of corresponding experimentally measured values. These optically measured N serve as essential parameters for device modeling to understand its physics in device performance and to optimize PCE; consistency between simulated and experimental device performance parameters using these values supports optical Hall effect as a reliable technique to extract electronic transport properties.
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