A fully hybrid integrated Erbium-based laser

材料科学 激光器 光电子学 光纤激光器 激光线宽 光子集成电路 相对强度噪声 激光功率缩放 光学 光子学 半导体激光器理论 半导体 波长 物理 兴奋剂
作者
Jing Wang,Zheru Qiu,Xinru Ji,Andrea Bancora,Grigory Lihachev,Johann Riemensberger,Rui Ning Wang,Andrey Voloshin,Tobias J. Kippenberg
出处
期刊:Cornell University - arXiv 被引量:5
标识
DOI:10.48550/arxiv.2305.03652
摘要

Erbium-doped fiber lasers exhibit high coherence and low noise as required for applications in fiber optic sensing, gyroscopes, LiDAR, and optical frequency metrology. Endowing Erbium-based gain in photonic integrated circuits can provide a basis for miniaturizing low-noise fiber lasers to chip-scale form factor, and enable large-volume applications. Yet, while major progress has been made in the last decade on integrated lasers based on silicon photonics with III-V gain media, the integration of Erbium lasers on chip has been compounded by large laser linewidth. Recent advances in photonic integrated circuit-based high-power Erbium-doped amplifiers, make a new class of rare-earth-ion-based lasers possible. Here, we demonstrate a fully integrated chip-scale Erbium laser that achieves high power, narrow linewidth, frequency agility, and the integration of a III-V pump laser. The laser circuit is based on an Erbium-implanted ultralow-loss silicon nitride Si$_3$N$4$ photonic integrated circuit. This device achieves single-mode lasing with a free-running intrinsic linewidth of 50 Hz, a relative intensity noise of $<$-150 dBc/Hz at $>$10 MHz offset, and output power up to 17 mW, approaching the performance of fiber lasers and state-of-the-art semiconductor extended cavity lasers. An intra-cavity microring-based Vernier filter enables wavelength tunability of $>$ 40 nm within the C- and L-bands while attaining side mode suppression ratio (SMSR) of $>$ 70 dB, surpassing legacy fiber lasers in tuning and SMRS performance. This new class of low-noise, tuneable Erbium waveguide laser could find applications in LiDAR, microwave photonics, optical frequency synthesis, and free-space communications. Our approach is extendable to other wavelengths, and more broadly, constitutes a novel way to photonic integrated circuit-based rare-earth-ion-doped lasers.
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