材料科学
MOSFET
垂直的
晶体管
场效应晶体管
压力(语言学)
抗压强度
电子迁移率
极限抗拉强度
光电子学
复合材料
电压
电气工程
几何学
工程类
哲学
语言学
数学
作者
Wakana Takeuchi,Katsuhiro Kutsuki,Eiji Kagoshima,Toru Onishi,Shinya Iwasaki,Mitsuo Sakashita,Hirokazu Fujiwara,Osamu Nakatsuka
标识
DOI:10.35848/1347-4065/ab6d85
摘要
We investigated the impact of the mechanical uniaxial strain on the inversion channel mobility of lateral n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on 4H-SiC(0001). We used custom-designed bend-holders to apply a tensile and compressive stress to the chip after MOSFET fabrication. The behavior of mobility with the two different channel directions and was investigated on the bend directions and with the tensile and compressive stress. We found that the inversion channel mobility effectively increases with the uniaxial compressive stress of the perpendicular configuration which is the drain current flow perpendicular to the bend direction. From the temperature dependence of mobility, we deduced that the enhancement of mobility is attributed to the reduction of the effective mass in 4H-SiC by introduced stress.
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