热光电伏打
制作
扩散
扩散过程
材料科学
锌
薄脆饼
光电子学
兴奋剂
纳米技术
共发射极
冶金
创新扩散
病理
物理
热力学
医学
替代医学
知识管理
计算机科学
作者
Liangliang Tang,Hong Ye,Jiu Xu
标识
DOI:10.1016/j.solmat.2013.11.027
摘要
This paper reports a novel zinc diffusion method for forming emitters in GaSb thermophotovoltaic cells. A closed quartz-tube diffusion system using Zn–Ga alloys as the diffusion source was designed to realize p-type doping in N-GaSb wafers. The surface diffusion region showing a high concentration of zinc was suppressed by this diffusion method, and the GaSb cells fabricated using this method showed good quantum efficiency in the near-infrared bands. Compared to that of the conventional pseudo-closed-box diffusion method, the controllability of the etch-back process after front-side metallization is significantly improved, and the cost of the cell fabrication is reduced because no protective gas is required during the diffusion process.
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