微波食品加热
高-κ电介质
退火(玻璃)
薄膜
化学工程
分析化学(期刊)
耗散因子
介电损耗
X射线光电子能谱
复合材料
图层(电子)
氧化物
作者
Bao Zhu,Xiaohan Wu,Wen-Jun Liu,Shi-Jin Ding,David Wei Zhang,Zhongyong Fan
标识
DOI:10.1186/s11671-019-2874-5
摘要
For metal-insulator-metal (MIM) capacitors applicated in the fields of RF, DRAM, and analog/mixed-signal integrated circuits, a high capacitance density is imperative with the downscaling of the device feature size. In this work, the microwave annealing technique is investigated to enhance the dielectric characteristics of Al2O3/ZrO2/Al2O3 based MIM capacitors. The results show that the permittivity of ZrO2 is increased to 41.9 (~ 40% enhanced) with a microwave annealing at 1400 W for 5 min. The substrate temperature is lower than 400 °C, which is compatible with the back end of line process. The leakage current densities are 1.23 × 10−8 and 1.36 × 10−8 A/cm2 for as-deposited sample and 1400 W sample, respectively, indicating that the leakage property is not deteriorated. The conduction mechanism is confirmed as field-assisted tunneling.
科研通智能强力驱动
Strongly Powered by AbleSci AI