材料科学
电阻率和电导率
兴奋剂
掺杂剂
杂质
可变距离跳频
化学气相沉积
相(物质)
凝聚态物理
外延
热传导
分析化学(期刊)
电导率
大气温度范围
纳米技术
光电子学
物理化学
复合材料
化学
图层(电子)
热力学
工程类
有机化学
物理
电气工程
色谱法
作者
A. Parisini,A. Bosio,V. Montedoro,Alessandra Gorreri,Alessio Lamperti,Matteo Bosi,G. Garulli,Salvatore Vantaggio,R. Fornari
出处
期刊:APL Materials
[American Institute of Physics]
日期:2019-03-01
卷期号:7 (3)
被引量:49
摘要
Low resistivity n-type ε-Ga2O3 epilayers were obtained for the first time either by adding silane to the gas phase during the metal organic vapour phase epitaxy deposition or by diffusing Sn in nominally undoped layers after the growth. The highest doping concentrations were few 1018 cm−3 and about 1017 cm−3 for Si and Sn doping, with corresponding resistivity below 1 and 10 Ω cm, respectively. Temperature dependent transport investigation in the range of 10-600 K shows a resistivity behavior consistent with the Mott law, suggesting that conduction through localized states dominates the electrical properties of Si- and Sn-doped samples. For both types of dopants, two different mechanisms of conduction through impurity band states seem to be present, each of them determining the transport behavior at the lower and higher temperatures of the measurement range.
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