Results from an international interlaboratory study on light‐ and elevated temperature‐induced degradation in solar modules

光伏系统 降级(电信) 再现性 可靠性工程 晶体硅 开路电压 计算机科学 材料科学 电压 太阳能电池 电气工程 光电子学 工程类 数学 统计
作者
Joseph Karas,Ingrid Repins,Karl Berger,Bernhard Kubicek,Fangdan Jiang,Daqi Zhang,Jean‐Nicolas Jaubert,A.B. Cueli,Tony Sample,Bengt Jaeckel,Matthias Pander,Esther Fokuhl,Max Koentopp,F. Kersten,Jun‐Hong Choi,Birinchi Bora,Chandan Banerjee,Stefan Wendlandt,Tristan Erion‐Lorico,Kenneth J. Sauer
出处
期刊:Progress in Photovoltaics [Wiley]
卷期号:30 (11): 1255-1269 被引量:15
标识
DOI:10.1002/pip.3573
摘要

Abstract This paper reports the results of an international interlaboratory comparison study on light‐ and elevated temperature‐induced degradation (LETID) on crystalline silicon photovoltaic (PV) modules. A large global network of PV module manufacturers and PV testing laboratories collaborated to design a protocol for LETID detection and screen a large and diverse set of prototype modules for LETID. Results across labs indicate the reproducibility of LETID testing is likely within ±1% of maximum power (P MP ). In intentionally engineered LETID‐sensitive modules, mean degradation after the prescribed detection stress is roughly 6% P MP . In other module types the LETID sensitivity is smaller, and in some we observe essentially negligible degradation attributable to LETID. In LETID‐sensitive modules, both open‐circuit voltage (V OC ) and short‐circuit current (I SC ) degrade by a roughly similar magnitude. We observe, as do previous studies, that LETID affects each cell in a module differently. An investigation of the potential mismatch losses caused by nonuniform LETID degradation found that mismatch loss is insignificant compared to the estimated loss of cell I SC , which drives loss of module I SC . Overall, this work has helped inform the creation of a forthcoming standard technical specification for LETID testing of PV modules, IEC TS 63342 ED1, and should aid in the interpretation of results from that and other LETID tests.
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