Spin reorientation in GdMn2(Ge1-Si )2 compounds

Structure and magnetic properties of layered GdMn2(Ge1-xSix)2 (0 ≤ x ≤ 1) compounds were studied. All the compounds crystallize in the tetragonal ThCr2Si2-type structure. It was shown by magnetization measurements at low temperature on quasi-single crystals that, with increasing Si concentration, the easy magnetization direction reorients from the c-axis to the basal plane. The spin reorientation occurs via an angular phase. A model of three magnetic sublattices coupled by negative intersublattice exchange interactions was used to describe the field dependences of the magnetization. For GdMn2Ge2 and GdMn2(Ge0.9Si0.1)2 in the fields applied along the c-axis, seven different magnetic structures were predicted, including two angular structures considered for the first time. The model explains formation of angular magnetic structures in zero field in GdMn2(Ge1-xSix)2 system by taking into account magnetic anisotropy of Mn sublattices with a positive anisotropy constant K1 and negative K2.