材料科学
兴奋剂
退火(玻璃)
微晶
光电子学
化学工程
纳米技术
复合材料
冶金
工程类
作者
Xiaomeng Duan,Deng‐Bing Li,Sabin Neupane,Rasha A. Awni,Yizhao Wang,Lorelle M. Mansfield,Dingyuan Lu,James Becker,Randy J. Ellingson,Michael J. Heben,Gang Xiong,Yanfa Yan,Feng Yan
标识
DOI:10.1021/acsaem.4c03173
摘要
Doping in cadmium telluride (CdTe) thin-film solar cells is a critical step in producing highly efficient CdTe solar modules. To date, copper (Cu) ex-situ diffusion doping and group V in situ doping (such as arsenic, As) have been effectively used in manufacturing CdTe solar modules. However, Cu doping is prone to rapid degradation, whereas the low activation ratio of the dopants constrains group V in situ doping. Recently, ex-situ group V doping has been developed, showing an improved doping activation ratio through a solution process. In this study, we developed a vapor-based AsCl3 doping method for diffusion doping of polycrystalline CdSeTe devices. AsCl3 vapor annealing can promote the diffusion of As into the bulk CdSeTe through a surface chemical reaction between CdTe and AsCl3. This approach has led to a long carrier lifetime of over 72 ns, Voc of 850 mV, and power conversion efficiency of ∼18% with Au metal electrodes. The vapor-based ex situ group V doping approach offers an effective means to perform group V diffusion doping into the CdSeTe device.
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