异质结
材料科学
电子转移
半导体
光电子学
带隙
电子
纳米技术
化学物理
化学
物理化学
物理
量子力学
作者
Yu Liu,Hongyu Li,Hong‐Xu Cao,Xin‐Yu Zheng,Bing- Yin Shi,Haitao Yin
出处
期刊:Nanoscale
[Royal Society of Chemistry]
日期:2023-12-15
卷期号:16 (4): 1865-1879
被引量:2
摘要
Systematic interface and defect engineering strategies have been demonstrated to be an effective way to modulate the electron transfer and nonlinear absorption properties in semiconductor heterojunctions. However, the role played by defects and interfacial strain in electron transfer at the interface of the MoX
科研通智能强力驱动
Strongly Powered by AbleSci AI