A Kind of Optoelectronic Memristor Model and Its Applications in Multi-Valued Logic

Memristors have been proved effective in intelligent computing systems owing to the advantages of non-volatility, nanometer size, low power consumption, compatibility with traditional CMOS technology, and rapid resistance transformation. In recent years, considerable work has been devoted to the question of how to design and optimize memristor models with different structures and physical mechanisms. Despite the fact that the optoelectronic effect inevitably makes the modelling process more complex and challenging, relatively few research works are dedicated to optoelectronic memristor modelling. Based on this, this paper develops an optoelectronic memristor model (containing mathematical model and circuit model). Moreover, the composite memristor circuit (series- and parallel-connected configuration) with a rotation mechanism is discussed. Further, a multi-valued logic circuit is designed, which is capable of performing multiple logic functions from 0–1, verifying the validity and effectiveness of the established memristor model, as well as opening up a new path for the circuit implementation of fuzzy logic.