自举(财务)
模拟开关
晶体管
电子工程
电子线路
计算机科学
模拟电子学
电压
拓扑(电路)
电气工程
采样和保持
工程类
数学
计量经济学
出处
期刊:IEEE Solid-State Circuits Magazine
[Institute of Electrical and Electronics Engineers]
日期:2015-01-01
卷期号:7 (3): 12-15
被引量:71
标识
DOI:10.1109/mssc.2015.2449714
摘要
Field-effect transistors (FETs) have been used as switches, particularly for analog signals, since the 1950s. In the early days of analog sampling, it was discovered that such devices exhibit an input-dependent on-resistance, thereby introducing distortion. This issue can be resolved by ?bootstrapping,? a circuit technique that minimizes the switch on-resistance variation in the presence of large input and output voltage swings. In this article, we study the bootstrapped switch topology and appreciate its role in nanometer designs.
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