Optically pumped vertical-cavity surface-emitting laser at 374.9 nm with an electrically conducting n-type distributed Bragg reflector

Abstract An optically pumped vertical-cavity surface-emitting laser with an electrically conducting n-type distributed Bragg reflector was achieved at 374.9 nm. An epitaxially grown 40-pair n-type AlGaN/GaN distributed Bragg reflector was used as the bottom mirror, while the top mirror was formed by a dielectric distributed Bragg reflector composed of seven pairs of HfO 2 /SiO 2 . A numerical simulation for the optical mode clearly demonstrated that a high confinement factor was achieved and the threshold pumping power density at room temperature was measured as 1.64 MW/cm 2 . The achieved optically pumped laser demonstrates the potential of utilizing an n-type distributed Bragg reflector for surface-emitting optical devices.