硅
石墨烯
纳米技术
材料科学
计算机科学
光电子学
数码产品
工程物理
电气工程
工程类
作者
Deji Akinwande,Cedric Huyghebaert,Ching-Hua Wang,Martha I. Serna,A. Goossens,Lain‐Jong Li,H.‐S. Philip Wong,Frank H. L. Koppens
出处
期刊:Nature
[Nature Portfolio]
日期:2019-09-25
卷期号:573 (7775): 507-518
被引量:1360
标识
DOI:10.1038/s41586-019-1573-9
摘要
The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones—by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications. Progress in integrating atomically thin two-dimensional materials with silicon-based technology is reviewed, together with the associated opportunities and challenges, and a roadmap for future applications is presented.
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