Thinning Solution‐proceed 2D Te for p‐ and n‐channel Junction Field Effect Transistor with High Mobility and Ideal Subthreshold Slope

Abstract Two‐dimensional non‐layered tellurene (Te) can serve as a promising candidate in transistor applications because of its high carrier mobility and air stability. However, it is still quite challenging in aspect of ultra‐thin channel and gate‐control ability in conventional metal‐oxide‐semiconductor field‐effect transistor architecture. This work proposes a facile thinning strategy for solution‐proceed Te flakes and fabricates a junction field‐effect transistor (JFET) architecture, that has well addressed the above‐mentioned two issues. Through a mild oxidative thinning process, the post‐growth Te flakes are thinned from bulk to few‐layer, guaranteeing the highly efficient electrostatic doping as a transistor channel. Then, a four‐terminal JFET‐based on p‐Te and n‐ReS 2 is designed, achieving a multifunctional integration of rectification diode, p‐ and n‐channel transistor in one single device. By accessing different contact scheme, the ReS 2 /Te p‐n diode is explored with a rectification ratio of 10 3 , the p‐channel JFET exhibits a high hole mobility of 317.6 cm 2 V −1 s −1 , ideal low subthreshold swing of 84 mV dec −1 . While the n‐channel JFET is obtained with electron mobility of 67.6 cm 2 V −1 s −1 and SS of 229 mV dec −1 . Both p‐ and n‐channel devices showcase clear saturation characteristic with ultra‐small pinch‐off voltage (≈0.4 V), which is crucial for low‐power logical and integrated circuit applications.