发光二极管
符号
二极管
量子效率
数学
光电子学
算法
物理
算术
作者
Feifan Xu,Tao Tao,Dongqi Zhang,Yang Zhang,Yimeng Sang,Junchi Yu,Ting Zhi,Zhe Zhuang,Zili Xie,Rong Zhang,Bin Liu
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2023-06-13
卷期号:44 (8): 1320-1323
被引量:4
标识
DOI:10.1109/led.2023.3285657
摘要
We demonstrated a simple method for achieving green and red colors by patterning quantum dots (QDs) on GaN-based blue micro-light-emitting diodes ( $\mu $ LEDs) using standard photolithography and dry etching process. The QDs could be patterned as small as $2 ~\mu \text{m}$ in size on a 4-inch wafer, revealing the ultra-high resolution and throughput capability of this method. The individual color-converted green and red $\mu $ LEDs in a size of $10\,\,\mu \text{m}\,\,\times 10\,\,\mu \text{m}$ exhibited a peak external quantum efficiency (EQE) of 9.6% and 14.7%, respectively. We also achieved the monolithic integration of red, green, and blue (RGB) $\mu $ LEDs as a single pixel by sequentially patterning red and green QDs. The color gamut of the RGB $\mu $ LEDs covered 83.4% of the Rec. 2020 color space in the CIE 1931 diagram. This method is very effective for patterning color-converted QDs with down to $2~\mu \text{m}$ -size-resolution and achieving high performance for red/green $\mu $ LEDs, while enabling scalable fabrication of full-color $\mu $ LED displays.
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