响应度
异质结
材料科学
光电探测器
光电子学
纳米线
作者
Junjun Xue,Saisai Wang,Jiaming Tong,Guofeng Yang,И. Н. Пархоменко,Ф. Ф. Комаров,Yu Liu,Qing Cai,Jin Wang,Ting Zhi
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2024-05-22
卷期号:6 (6): 4643-4652
被引量:2
标识
DOI:10.1021/acsaelm.4c00636
摘要
Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present a high-response and fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at a 0 V bias for underwater photodetection through the photoelectrochemical (PEC) process. Compared to the UV PD without AlN insertion, the detection performance would be increased to 3–5 times for underwater solar-blind UV detection under the effect of heterostructure band engineering to prevent carrier drift and recombination at 0 V bias under 255 nm illumination. Furthermore, the photoresponsivity and response speed can be further improved by a surface modification strategy to adjust the carrier transport between the nitride semiconductor and electrolyte. These promising results lay a solid foundation for the development of III-nitride high-efficiency, self-powered PEC photosynthesis devices in the future.
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