Lasing‐Assisted Synthesis of Metal–Organic Frameworks (MOFs) and Its Application to Memory and Neuromorphic Devices

Abstract Recently, metal–organic frameworks (MOFs) have gained attention in the field of electronics owing to their capability to tune their electrical characteristics. However, conventional methods for synthesizing MOFs pose challenges for their integration into electronic devices because of their long synthesis times and complex transfer steps. In this study, for the first time, lasing‐assisted synthesis (LAS) is used to rapidly and directly synthesize MOFs. These are applied to resistive random access memory (RRAM) devices. Using the LAS method, Cu(BDC) and Cu(BTC) are synthesized in a remarkably short time (≈5 min) and formed directly on metal substrates as thin films. This simplified their integration into RRAMs. The Cu(BDC)‐ and Cu(BTC)‐based RRAMs are evaluated for their potential in memory and neuromorphic applications. Both devices demonstrated nonvolatile memory capabilities with a remarkable data retention time of 10 4 s and long‐term plasticity (LTP) in response to voltage stimuli. However, the suitability of each device for a specific application varies depending on the type of MOFs used. The Cu(BTC)‐based RRAM is more suitable for memory applications because of its higher on/off ratio, longer endurance, and more data storage capacity. Conversely, Cu(BDC)‐based RRAM is highly effective in neural network simulation, achieving higher classification accuracy.