In-Plane Bulk Photovoltaic Effect in a MoSe2/NbOI2 Heterojunction for Efficient Polarization-Sensitive Self-Powered Photodetection

Two-dimensional ferroelectric materials can generate a bulk photovoltaic effect, making them highly promising for self-powered photodetectors. However, their practical application is limited by a weak photoresponse due to a weak transition strength and wide band gap. In this study, we construct a van der Waals heterojunction using NbOI2, which has significant in-plane polarization, with a highly absorbing MoSe2 layer. We observe ultrafast hole transfer from MoSe2 to NbOI2 within 0.4 ps and electron transfer in the opposite direction within 3.8 ps, facilitating efficient charge dissociation and extraction. Applying a direct current electric field poling modulates the ferroelectric domains in NbOI2, enhancing the bulk photovoltaic effect. This results in one of the highest responsivities for self-powered photodetectors (101.3 mA/W) at 0 V bias alongside excellent polarization sensitivity (∼7.58). This work advances the understanding of self-powering mechanisms via the bulk photovoltaic effect and proposes new strategies for future self-powered devices.