钝化
材料科学
光电子学
限制
光伏系统
图层(电子)
载流子寿命
价带
异质结
纳米技术
带隙
电气工程
机械工程
硅
工程类
作者
Axel Gon Medaille,Kunal J. Tiwari,Sergio Giraldo,Marcel Placidi,Edgardo Saucedo,Zacharie Jehl Li‐Kao
出处
期刊:Solar RRL
[Wiley]
日期:2021-12-04
卷期号:6 (2)
被引量:3
标识
DOI:10.1002/solr.202100911
摘要
Sb 2 Se 3 is an emerging earth‐abundant material praised for its promising optoelectronic properties, although the presence of interfacial defects at the vicinity of the p–n junction limit its performance as photovoltaic absorber. Using a device modeling approach and a realistic set of material parameters, it unravels pathways mitigating the impact of interfacial defects with a baseline Sb 2 Se 3 /CdS. Two straightforward strategies are devised and tested against the baseline. First, a thin front surface sulfurization of the Sb 2 Se 3 absorber allowing a local lowering of the valence band and creating a “front surface field,” resulting in an increased carrier selectivity and limiting the density of holes available for interface recombination, leading to a significant efficiency improvement for optimized conditions. Second, the use of an ultrathin insulating Al 2 O 3 layer between the absorber and the buffer layer is considered, helping in preventing detrimental chemical interdiffusion at the junction. This strategy provides a direct interface passivation, though the interlayer thickness needs a fine tuning to balance the benefits of reduced interface recombination and a detrimental Al 2 O 3 low‐conductivity layer. In each case, an analysis covering a broad range of parameters is presented, and conclusions are made in the frame of past numerical and experimental results.
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