材料科学
微晶
结晶
硅
结晶学
晶界
电子背散射衍射
无定形固体
相(物质)
复合材料
化学工程
微观结构
冶金
化学
工程类
有机化学
作者
Felix Law,Yang Yi,Hidayat Hidayat,Per I. Widenborg,Joachim Luther,Bram Hoex
摘要
In this work, the presence of geometrically necessary dislocations (GNDs) in polycrystalline silicon (poly-Si) thin films was detected, suggesting that plastic deformation occurs during the solid phase crystallization (SPC) process of amorphous silicon (a-Si:H). Electron backscatter diffraction was used to characterize dislocations in SPC poly-Si thin films. The elevated temperatures during SPC allow the GNDs to rearrange into arrays, forming low angle grain boundaries. We found that GNDs start forming in poly-Si grains with sizes >∼3 μm, suggesting that larger grains are more defective. GNDs are extra defects in addition to the existing statistically stored dislocations that form during grain growth and hence more care needs to be taken to minimize the formation of GNDs.
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