材料科学
电介质
有机半导体
光电子学
半导体
电子迁移率
场效应晶体管
晶体管
栅极电介质
有机场效应晶体管
场效应
纳米技术
电气工程
电压
工程类
作者
Shujun Zhou,Qingxin Tang,Hongkun Tian,Xiaoli Zhao,Yanhong Tong,Stephen Barlow,Seth R. Marder,Yichun Liu
标识
DOI:10.1021/acsami.8b02304
摘要
The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.
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