材料科学
结温
dBc公司
电源模块
倒装芯片
互连
引线键合
光电子学
颠簸
碳化硅
造型(装饰)
炸薯条
功率(物理)
电气工程
复合材料
机械工程
计算机科学
计算机网络
物理
胶粘剂
CMOS芯片
图层(电子)
量子力学
工程类
作者
Daniel Rhee Min Woo,Hwang How Yuan,Jerry Aw Jie Li,Lee Jong Bum,Hengyun Zhang
标识
DOI:10.1109/ectc.2016.396
摘要
In this paper, authors developed miniaturizeddouble side cooling packaging for SiC (silicon carbide) highpower inverter module using new material solutions towithstand high temperature condition over 220oC. Instead ofconventional thick wire bonding on the device, the flip chipbonding for high power source and gate interconnections aredeveloped. For the drain interconnection, copper clips areattached using high temperature endurable interconnectionmaterials. By utilizing these flip-chip structures, the powermodule with double side cooling design was enabled effectivelyfor the heat dissipation induced by high power switchingoperation. Through the thermal modeling and characterization, the power module's package thermal dissipation performancewas found to be enhanced by 2 times compared with theconventional single side cooling type power module. To copewith the increased maximum junction temperature limit tooperate wide band gap power devices the novel packagingmaterial and its process which can endure up to 220 °C weredeveloped also. Bi and Ag based high temperature solder wasapplied for the flip-chip bumping for SiC device on the DBC(direct bonded copper). The copper clip was applied on thedevice backside as drain interconnection to DBC also. Hightemperature endurable EMC (epoxy molding compound) andTIM (thermal interface material) were also evaluated. Thepackaging process was optimized and developed along with themodeling. Through the reliability assessment, we could showthe potential applicability of double side cooling power modulewith flip-chip and clip bonding design and it would be usefulfor the SiC and GaN based high power module and highjunction and environmental temperature endurableapplications for the near future.
科研通智能强力驱动
Strongly Powered by AbleSci AI