Development and optimization of metal silicide EUV pellicle for 400W EUV lithography

In the extreme ultraviolet lithography (EUVL) process, extreme ultraviolet (EUV) pellicles serve as thin, transparent membranes that shield the photomask (reticle) from particle contamination, thereby preserving photomask pattern integrity, reducing chip failure risks, and enhancing production yields. The production of EUV pellicles is highly challenging due to their mechanical fragility at nanometer-scale thicknesses and the need to endure the rigorous conditions of the EUVL environment, which include high temperatures and hydrogen radicals. Consequently, extensive research has been conducted on a variety of materials, such as carbon-based and silicon-based substances, for the development of EUV pellicles. This study explores the feasibility of implementing metal silicide (MeSi