Optical–Electrical Coordinately Modulated Memristor Based on 2D Ferroelectric RP Perovskite for Artificial Vision Applications

Abstract Traditional artificial vision systems built using separate sensing, computing, and storage units have problems with high power consumption and latency caused by frequent data transmission between functional units. An effective approach is to transfer some memory and computing tasks to the sensor, enabling the simultaneous perception‐storage‐processing of light signals. Here, an optical–electrical coordinately modulated memristor is proposed, which controls the conductivity by means of polarization of the 2D ferroelectric Ruddlesden–Popper perovskite film at room temperature. The residual polarization shows no significant decay after 10 9 ‐cycle polarization reversals, indicating that the device has high durability. By adjusting the pulse parameters, the device can simulate the bio‐synaptic long/short‐term plasticity, which enables the control of conductivity with a high linearity of ≈0.997. Based on the device, a two‐layer feedforward neural network is built to recognize handwritten digits, and the recognition accuracy is as high as 97.150%. Meanwhile, building optical–electrical reserve pool system can improve 14.550% for face recognition accuracy, further demonstrating its potential for the field of neural morphological visual systems, with high density and low energy loss.