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A Microwave-Assisted, Solvent-Free Approach for Effective Grafting of High-Permittivity Fillers to Construct Homogeneous Polymer-Based Dielectric Film with High Energy Density

材料科学 复合材料 电介质 聚合物 介电常数 电容器 极限抗拉强度 介电损耗 聚丙烯 电压 电气工程 光电子学 工程类
作者
Qi Wu,Liang Wen,Min Nie,Dawei Xu
出处
期刊:Composites Science and Technology [Elsevier]
卷期号:257: 110848-110848
标识
DOI:10.1016/j.compscitech.2024.110848
摘要

Polymer-based dielectric film capacitors are essential energy storage components in high-power energy storage devices benefiting from their high breakdown strength (Eb) and ultra-fast charge storage/release capability. However, the state-of-the-art commercial capacitor, biaxially oriented polypropylene (BOPP), exhibits limited energy storage density primarily due to low dielectric constant, which hinders the advancement of the film capacitor industry. Introducing high-permittivity (high-k) nanofillers into PP matrix to improve polarization is a promising method but poor filler dispersion leads to a remarkable decrease of Eb, while various strategies to enhance dispersion of fillers typically require sophisticated process involving toxic procedure and consuming significant time and cost. Herein, we show that a novel and scalable surface grafting method for high-k fillers can be achieved by a facile and short-period microwave irradiation with the assistance of silane coupling agent (KH560). As a demonstration, the KH560 is effectively grafted onto the surface of barium titanate (BT), achieving a high grafting ratio of 4.91 % at a yield of 85.1 % within a short time (40s). Furthermore, the surface modified BT nanofillers are introduced into PP matrix and then biaxially stretched. The as-prepared film exhibits excellent dispersion and superior compatibility, resulting in a remarkable enhancement of tensile strength (from 82 MPa to 115.4 MPa), breakdown strength (from 200 MV/m to 254 MV/m), and energy density (from 1.49 J/cm3 to 2.21 J/cm3). This work proposes a new strategy for constructing homogeneous polymer-based dielectric film by microwave activating high-k fillers and is crucial for the design of next-generation energy storage devices.
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